Degradation Dependent on Channel Width in Sequential Lateral Solidified Poly-Si Thin Film Transistors.
| Autor: | Hsing-Yi Liang, Szu-I Hsieh, Hung-Tse Chen, Chrong-Jung Lin, Ya-Chin King |
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| Zdroj: | 2007 IEEE International Reliability Physics Symposium Proceedings 45th Annual; 2007, p682-683, 2p |
| Databáze: | Complementary Index |
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