Ultra-Low Leakage Silicon-on-Insulator Technology for 65 nm Node and Beyond.

Autor: Jin Cai, Majumdar, A., Dobuzinsky, D., Ning, T.H., Koester, S.J., Haensch, W.E.
Zdroj: 2007 IEEE International Electron Devices Meeting; 2007, p907-910, 4p
Databáze: Complementary Index