A 0.127 μm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications.
Autor: | Wang, G., Cheng, K., Ho, H., Faltermeier, J., Kong, W., Kim, H., Cai, J., Tanner, C., McStay, K., Balasubramanyam, K., Pei, C., Ninomiya, L., Li, X., Winstel, K., Dobuzinsky, D., Naeem, M., Zhang, R., Deschner, R., Brodsky, M.J., Allen, S. |
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Zdroj: | 2006 International Electron Devices Meeting; 2006, p1-4, 4p |
Databáze: | Complementary Index |
Externí odkaz: |