Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy.
| Autor: | Tsen, G.K.O., Sewell, R., Atanacio, A.J., Prince, K.E., Musca, C.A., Dell, J.M., Antoszewski, J., Faraone, L. |
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| Zdroj: | 2006 Conference on Optoelectronic & Microelectronic Materials & Devices; 2006, p55-58, 4p |
| Databáze: | Complementary Index |
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