Growth of GaN on a nanoscale periodic faceted Si substrate by metal organic vapor phase epitaxy.
| Autor: | Lee, S.C., Sun, X.Y., Hersee, S.D., Lee, J., Ziang, Y.-B., Xu, H., Brueck, S.R.J. |
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| Zdroj: | 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767); 2003, p15-21, 7p |
| Databáze: | Complementary Index |
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