Dislocation/grain boundary effects on the thermal conductivity of hydride vapor phase epitaxy grown GaN/sapphire (0001).
| Autor: | Florescu, D.I., Pollak, F.H., Paskova, T., Valcheva, E., Monemar, B. |
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| Zdroj: | 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498); 2000, p467-472, 6p |
| Databáze: | Complementary Index |
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