Investigation of parasitic BJT turn-on enhanced two-stage drain saturation current in high-voltage NLDMOS.
| Autor: | Chih-Chang Cheng, Chou, H.L., Chu, F.Y., Liou, R.S., Lin, Y.C., Wu, K.M., Jong, Y.C., Tsai, C.L., Jun Cai, Tuan, H.C. |
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| Zdroj: | 2011 IEEE 23rd International Symposium on Power Semiconductor Devices & ICs (ISPSD); 2011, p208-210, 3p |
| Databáze: | Complementary Index |
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