Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode.
| Autor: | Chen, Y.Y., Goux, L., Pantisano, L., Swerts, J., Adelmann, C., Mertens, S., Afanasiev, V.V., Wang, X.P., Govoreanu, B., Degraeve, R., Kubicek, S., Paraschiv, V., Verbrugge, B., Jossart, N., Altimime, L., Jurczak, M., Kittl, J., Groeseneken, G., Wouters, D.J. |
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| Zdroj: | Interconnect Technology Conference & 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International; 2011, p1-3, 3p |
| Databáze: | Complementary Index |
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