| Autor: |
Lao, Pudong, Tang, Wade C., Rajkumar, K. C., Guha, S., Madhukar, A., Liu, J. K., Grunthaner, F. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/15/1990, Vol. 67 Issue 10, p6445, 9p, 7 Diagrams, 3 Graphs |
| Abstrakt: |
Presents the results of Raman and Rayleigh scattering, near-band-edge photoluminescence, and electron microscope examination of gallium arsenide (GaAs) thin films grown on silicon (Si). Applications for heteroepitaxy of GaAs thin films on Si substrates; Details of experimental techniques used; Methods for the improvement of the crystalline quality and the electronic and optical properties of GaAs film on a Si substrate. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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