| Autor: |
Stinson, M. G., Osburn, C. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/1990, Vol. 67 Issue 9, p4190, 13p, 1 Black and White Photograph, 3 Diagrams, 4 Charts, 14 Graphs |
| Abstrakt: |
Presents a study that examined an enhanced leakage current through thin silicon dioxide gate insulators of ion-implanted metal-oxide-semiconductors. Influence of gate charging on current leakage; Analysis of the ion mixing and knock-on recoils in the metal-oxide-semiconductors; Effect of the gate material on current leakage. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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