| Autor: |
Tadayon, Bijan, Tadayon, Saied, Spencer, M. G., Harris, G. L., Griffin, J., Eastman, L. F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/1/1990, Vol. 67 Issue 1, p589, 3p, 5 Graphs |
| Abstrakt: |
Provides information on a study which analyzed silicon-doped GaAs layers which were grown by the migration-enhanced epitaxy method and by the conventional molecular-beam epitaxy (MBE) method. Benefits from the growth at low T[subs]; Limitation in the use of the MBE method; Uses of the migration-enhanced epitaxy method. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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