| Autor: |
Dansas, P., Pascal, D., Bru, C., Laval, S., Giraudet, L., Allovon, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/1/1990, Vol. 67 Issue 3, p1384, 5p, 2 Diagrams, 4 Graphs |
| Abstrakt: |
Presents a study that analyzed a gallium-indium-arsenic n-type heterostructure grown by molecular beam epitaxy on semi-insulating iron-doped indium phosphide substrates. Determination of the carrier concentration and mobility profiles; Examination of the variation of the current flowing through the heterostructure; Discussion on the mechanism by which an electron-like trap can be neutralized by an infrared irradiation. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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