Enhanced carrier diffusion lengths and photon transport in AlxGa1-x As/GaAs structures.

Autor: Bradshaw, J. L., Choyke, W. J., Devaty, R. P., Messham, R. L.
Předmět:
Zdroj: Journal of Applied Physics; 2/1/1990, Vol. 67 Issue 3, p1483, 9p
Abstrakt: Investigates the observation of a gallium arsenide luminescence spectrum seen through a metalorganic chemical vapor deposited (MOCVD) aluminum[subx]gallium[sub1-x] film. Experimental procedure; Carrier diffusion and photon transmission through the MOCVD layers; Discussion on the excitation mechanisms introduced in the study.
Databáze: Complementary Index