| Autor: |
Tao, Meng, Botchkarev, Andrei E., Park, Daegyu, Reed, John, Chey, S. Jay, Van Nostrand, Joseph E., Cahill, David G., Morkoç, Hadis |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 4/15/1995, Vol. 77 Issue 8, p4113, 3p, 1 Black and White Photograph, 1 Chart, 2 Graphs |
| Abstrakt: |
Provides information on a study that proposed the use of in situ anneal to solve the problem of incompatible growth temperature of silicon on GaAs metal-insulator-semiconductor structures. Experimental procedure; Results and discussion on the study. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
