| Autor: |
Bürkner, S., Baeumler, M., Wagner, J., Larkins, E. C., Rothemund, W., Ralston, J. D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/1996, Vol. 79 Issue 9, p6818, 8p, 1 Black and White Photograph, 1 Diagram, 2 Charts, 3 Graphs |
| Abstrakt: |
Provides information on a study that investigated interdiffusion in molecular-beam epitaxially-grown, highly strained In[sub0.35]Ga[sub0.65]As/GaAs multiple quantum well structures. Methodology of the study; Results and discussion on the study; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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