| Autor: |
Oehling, S., Lugauer, H. J., Schmitt, M., Heinke, H., Zehnder, U., Waag, A., Becker, C. R., Landwehr, G. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 3/1/1996, Vol. 79 Issue 5, p2343, 4p, 5 Graphs |
| Abstrakt: |
Reports on the growth and the characterization of p-type CdTe grown by molecular beam epitaxy on Cd[sub0.96]Zn[sub0.04]Te substrates. Preparation procedure for the substrates; Depth dependent carrier concentration of a doped CdTe sample; Photoluminescence measurements. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
