Limit of validity of the thermionic-field-emission treatment of electron injection across emitter-base junctions in abrupt heterojunction bipolar transistors.

Autor:	Kumar, T., Cahay, M., Shi, S., Roenker, K., Stanchina, W. E.
Předmět:	ELECTRON transport BIPOLAR transistors WKB approximation
Zdroj:	Journal of Applied Physics; 6/1/1995, Vol. 77 Issue 11, p5786, 7p
Abstrakt:	Presents a study which developed a hybrid model to simulate electron transport through the emitter-base heterojunction and the base region of abrupt heterojunction bipolar transistors. Experimental efforts to characterize electron transport; Description of the Wentzel-Kramers-Brillouin treatment; Discussion on the quantum mechanical approach to model electron injunction through the emitter-base junction.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu