InP crystal growth on planar SiO2 substrates.
Autor: | Oku, Satoshi, Mori, Hidefumi, Ohmachi, Yoshiro |
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Předmět: | |
Zdroj: | Journal of Applied Physics; 10/1/1985, Vol. 58 Issue 7, p2767, 3p |
Abstrakt: | Presents a study which examined crystal growth on planar silicon dioxide substrates. Method of the study; Results and discussion; Conclusion. |
Databáze: | Complementary Index |
Externí odkaz: |