InP crystal growth on planar SiO2 substrates.

Autor: Oku, Satoshi, Mori, Hidefumi, Ohmachi, Yoshiro
Předmět:
Zdroj: Journal of Applied Physics; 10/1/1985, Vol. 58 Issue 7, p2767, 3p
Abstrakt: Presents a study which examined crystal growth on planar silicon dioxide substrates. Method of the study; Results and discussion; Conclusion.
Databáze: Complementary Index