Impurity diffusion and layer interdiffusion in AlxGa1-xAs-GaAs heterostructures.

Autor: Deppe, D. G., Holonyak, N., Plano, W. E., Robbins, V. M., Dallesasse, J. M., Hsieh, K. C., Baker, J. E.
Předmět:
Zdroj: Journal of Applied Physics; 8/15/1988, Vol. 64 Issue 4, p1838, 7p, 2 Diagrams, 5 Graphs
Abstrakt: Presents a study that investigated impurity diffusion and layer interdiffusion in Al[sub x] Ga[sub1-x] As-GaAs heterostructures. Experimental procedure; Results and discussion.
Databáze: Complementary Index