| Autor: |
Ayres, J. R., Brotherton, S. D., Clegg, J. B., Gill, A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/1987, Vol. 62 Issue 9, p3628, 5p, 5 Graphs |
| Abstrakt: |
Presents a study that compared electrical defects in germanium[sup+] and silicon[sup+] preamorphized BF2-implanted silicon. Way to avoid the problem of forming shallow p[sup+] regions with low-energy boron ion implantation; Sample preparation and measurement procedures; Results of deep-level transient spectroscopy measurements. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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