1/f noise in a quarter-micron GaAs Hall device made by focused ion-beam implantation.

Autor: Tacano, Munecazu, Kanayama, Toshihiko, Hiroshima, Hiroshi, Komuro, Masanori, Sugiyama, Yoshinobu
Předmět:
Zdroj: Journal of Applied Physics; 11/15/1987, Vol. 62 Issue 10, p4301, 3p
Abstrakt: Presents an evaluation of the noise parameter in a quarter-micron gallium arsenide Hall device made by focused ion-beam (FIB) implantation. Background on FIB implantation; Information on how the noise was measured; Noise spectra of the Hall device; Description of the device.
Databáze: Complementary Index