| Autor: |
Missous, M., Rhoderick, E. H., Singer, K. E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/1986, Vol. 59 Issue 9, p3189, 7p, 2 Black and White Photographs, 1 Chart, 6 Graphs |
| Abstrakt: |
Details a study which examined the annealing behavior of epitaxial films of aluminum deposited on gallium arsenide by molecular-beam epitaxy. Molecular beam epitaxy; Thermal behavior of epitaxial film; Transmission electron microscopy analysis of the aluminum films. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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