Characterization of the effects of different capping layer structures on the laser recrystallization of silicon by using electrical test structures and Raman spectroscopy.

Autor:	Lu, Hsindao E., Boyd, Joseph T., Jackson, Howard E., Janning, John L.
Předmět:	PLASTIC embedment of electronic equipment RAMAN spectroscopy RECRYSTALLIZATION (Metallurgy) SILICON LASERS
Zdroj:	Journal of Applied Physics; 12/15/1986, Vol. 60 Issue 12, p4273, 4p, 1 Diagram, 1 Chart, 2 Graphs
Abstrakt:	Presents a study which compared three different encapsulation structures by using Raman spectroscopy and metal-oxide-semiconductor electrical test structures fabricated in laser-recrystallized silicon films. Sample fabrication; Measurements; Results; Conclusion.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu