| Autor: |
Geddo, M., Maghini, D., Stella, A., Cottini, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/15/1985, Vol. 58 Issue 12, p4733, 3p, 3 Graphs |
| Abstrakt: |
Reports on the optical determination of free-carrier concentration in epitaxial layers on n-type silicon grown on N[sup+] or N[sup-] substrates. Significance of the growth of epitaxial layers; Main properties of the epitaxial layers; Difference between Brewster angles epitaxial layer and pure single-crystal silicon. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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