The effect of annealing on resistivity of low pressure chemical vapor deposited titanium diboride.
Autor: | Choi, C. S., Xing, G. C., Ruggles, G. A., Osburn, C. M. |
---|---|
Předmět: | |
Zdroj: | Journal of Applied Physics; 6/1/1991, Vol. 69 Issue 11, p7853, 9p, 2 Black and White Photographs, 2 Diagrams, 8 Graphs |
Abstrakt: | Deals with a study which examined the correlation between the resistivity of titanium bromide. Chemical vapor deposition parameters; Discussion on the annealing temperature; Results and discussion. |
Databáze: | Complementary Index |
Externí odkaz: |