The effect of annealing on resistivity of low pressure chemical vapor deposited titanium diboride.

Autor: Choi, C. S., Xing, G. C., Ruggles, G. A., Osburn, C. M.
Předmět:
Zdroj: Journal of Applied Physics; 6/1/1991, Vol. 69 Issue 11, p7853, 9p, 2 Black and White Photographs, 2 Diagrams, 8 Graphs
Abstrakt: Deals with a study which examined the correlation between the resistivity of titanium bromide. Chemical vapor deposition parameters; Discussion on the annealing temperature; Results and discussion.
Databáze: Complementary Index