Electronic subbands for AlxGa1-xAs/GaAs multilayer and superlattice structures.

Autor: Ruden, P. P., Engelhardt, D. C., Abrokwah, J. K.
Předmět:
Zdroj: Journal of Applied Physics; 1/1/1987, Vol. 61 Issue 1, p294, 5p, 1 Diagram, 1 Chart, 6 Graphs
Abstrakt: Presents a study which investigated the structures of superlattice modulation-doped field-effect transistors. Calculations of the electronic subband structure of GaAs/Al[subx]Ga[subt]As superlattices; Discussion and calculation of parameters; Results of the study.
Databáze: Complementary Index