Structure and recombination in InGaAs/GaAs heterostructures.

Autor: Fitzgerald, E. A., Ast, D. G., Kirchner, P. D., Pettit, G. D., Woodall, J. M.
Předmět:
Zdroj: Journal of Applied Physics; 2/1/1988, Vol. 63 Issue 3, p693, 11p, 8 Black and White Photographs, 1 Diagram, 1 Chart, 1 Graph
Abstrakt: Focuses on a study that investigated the structure and recombination in indium gallium arsenide/gallium arsenide heterostructures. Methodology; Results and discussion; Conclusions.
Databáze: Complementary Index