| Autor: |
Heremans, J., Partin, D. L., Morelli, D. T., Thrush, C. M., Karczewski, G., Furdyna, J. K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/1993, Vol. 74 Issue 3, p1793, 6p, 1 Chart, 7 Graphs |
| Abstrakt: |
Provides information on the results of Shubnikov-de Haas, cyclotron resonance and Hall-effect measurements on δ-doped indium (In)-antimony (Sb):silicon films grown by molecular-beam epitaxy on insulating indium phosphide substrates. Presence of additional electrons with the conduction-band-edge mass of bulk InSb which exist presumably in the bulk of the films. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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