Comparison of compositionally graded to abrupt emitter-base junctions used in the heterojunction bipolar transistor.
| Autor: | Enquist, P. M., Ramberg, L. P., Eastman, L. F. |
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| Zdroj: | Journal of Applied Physics; 4/1/1987, Vol. 61 Issue 7, p2663, 7p |
| Abstrakt: | Presents a study which compared compositionally graded to abrupt emitter-base junctions used in the heterojunction bipolar transistor. Measurements of electroluminescence emitted from the base region and temperature-dependent current gain; Method used in the study; Results and discussion. |
| Databáze: | Complementary Index |
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