Molecular beam epitaxial growth of GaAs on Si(211).

Autor:	Uppal, Parvez N., Kroemer, Herbert
Předmět:	MOLECULAR beam epitaxy GALLIUM arsenide SILICON
Zdroj:	Journal of Applied Physics; 9/15/1985, Vol. 58 Issue 6, p2195, 9p, 4 Black and White Photographs, 2 Diagrams, 2 Graphs
Abstrakt:	Presents a study which investigated molecular beam epitaxial growth of gallium arsenide on silicon. Method of the study; Results and discussion; Conclusion.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu