| Autor: |
Hu, S. Y., Corzine, S. W., Law, K.-K., Young, D. B., Gossard, A. C., Coldren, L. A., Merz, J. L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/1994, Vol. 76 Issue 8, p4479, 9p, 2 Diagrams, 8 Graphs |
| Abstrakt: |
Presents information on a study that measured the increase in threshold currents due to lateral carrier diffusion in InGaAs/AlGaAs quantum-well (QW) ridge-waveguide laser diodes. Sample preparation and characterization; Optical gain calculation for the InGaAs QW; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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