Residual hydrogen gas induced defects in heteroepitaxial Y1Ba2Cu3O7-x films.

Autor: Kamei, Masayuki, Yoshida, Isao, Takahashi, Hiromi, Itti, Rittaporn, Morishita, Tadataka
Předmět:
Zdroj: Journal of Applied Physics; 10/15/1992, Vol. 72 Issue 8, p3622, 4p, 1 Black and White Photograph, 1 Diagram, 1 Chart, 5 Graphs
Abstrakt: Presents a study which utilized the reactive evaporation method of heteroepitaxial Y[sub1]Ba[sub2]Cu[sub3]O[sub7-subx] films grown on MgO(100) substrates. Impact of the reflection high energy electron diffraction patterns on the thin films; Accumulation of hydrogen induced defects during the heteroepitaxial growth of the films.
Databáze: Complementary Index