Autor: |
Houdy, Ph., Maurice, J. L., Besson, J. M., Laval, J. Y., Chevy, A, Gorochov, O. |
Předmět: |
|
Zdroj: |
Journal of Applied Physics; 6/15/1987, Vol. 61 Issue 12, p5267, 5p, 4 Black and White Photographs, 3 Graphs |
Abstrakt: |
Provides information on a study which discussed two-dimensional precipitates associated with stacking faults in layer semiconductors to explain transport properties of these crystals particularly their electrical anisotropy. Cause of high-field cyclotron resonance behavior; Features of the semiconductor with regard to applications of indium selenide to the photovoltaic conversion of solar energy; List of layered crystals. |
Databáze: |
Complementary Index |
Externí odkaz: |
|