A new method to detect energy-band bending using x-ray photoemission spectroscopy.

Autor:	Ogama, T.
Předmět:	ENERGY-band theory of solids SEMICONDUCTORS PHOTOEMISSION SPECTRUM analysis
Zdroj:	Journal of Applied Physics; 7/15/1988, Vol. 64 Issue 2, p753, 5p, 2 Diagrams, 2 Charts, 4 Graphs
Abstrakt:	Presents information on a study which proposed a method for detecting energy-band bending in various semiconductor devices using x-ray photoemission spectroscopy. Formalism of energy-band bending; Experimental details; Results and discussion; Conclusions.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu