| Autor: |
Swoger, J. H., Kovacic, S. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1993, Vol. 74 Issue 4, p2565, 7p, 1 Diagram, 1 Chart, 7 Graphs |
| Abstrakt: |
Presents a study which proposed a simple mechanism explaining the enhanced luminescence of p-i-n structures and reach-though avalanche photodiodes approaching reverse-bias breakdown. Details on the phenomenon of light emission from reverse-biased silicon p-n junctions; Theoretical background of the study; Details of an experiment on light emission from reverse-biased p-in-n photodiodes. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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