| Autor: |
Wood, C. E. C., Kerr, T. M., McLean, T. D., Westwood, D. I., Medland, J. D., Blight, S., Davies, R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1986, Vol. 60 Issue 4, p1300, 6p, 1 Chart, 13 Graphs |
| Abstrakt: |
Presents information on a study that provided evidence to support the conclusion that antimony has a significant beneficial effect on the electrical, optical, and structural properties of GaAs and AlGaAs alloy epitaxial layers grown by molecular-beam epitaxy. Experimental details; Results and discussion on the study; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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