Interdiffusion and reaction in Cu/PtSi/Si(100) systems.

Autor: Hong, Stella Q., Hong, Q. Z., Li, Jian, Mayer, J. W.
Předmět:
Zdroj: Journal of Applied Physics; 4/15/1994, Vol. 75 Issue 8, p3959, 5p
Abstrakt: Focuses on a study which investigated the interdiffusion and reaction in copper (Cu)/platinum silicide (PtSi)/silicon (100) structures. Description of Cu behavior during annealing across the intermediate PtSi layer; Observations when the sample was prepared in situ without breaking vacuum; Discussion on Cu silicide formation.
Databáze: Complementary Index