| Autor: |
Ghamlouch, H., Aubin, M., Carlone, C., Khanna, S. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/1/1993, Vol. 74 Issue 7, p4357, 6p, 1 Chart, 7 Graphs |
| Abstrakt: |
Examines epitaxial n-type gallium arsenide samples before and after irradiation with 7 MeV electrons. Improvement of transport properties and observation of DX-like centers at ambient pressure; Defects in gallium arsenide due to irradiation with energetic electrons; Radiation effects in gallium arsenide. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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