| Autor: |
Nesheva, D., Raptis, C., Perakis, A., Bineva, I., Aneva, Z., Levi, Z., Alexandrova, S., Hofmeister, H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/2002, Vol. 92 Issue 8, p4678, 6p, 1 Black and White Photograph, 1 Chart, 4 Graphs |
| Abstrakt: |
Silicon-rich silicon oxide thin films have been prepared by thermal evaporation of silicon monoxide in vacuum. The SiQ[SUBx] film composition ( 1.1 ⩽ x ⩽ 1.7) has been controlled by varying the deposition rate and residual pressure in the chamber. Long time stability of all films has been ensured by a postdeposition annealing at 523 K for 30 min in Ar atmosphere. Some films were further annealed at 973 K and some others at 1303 K. Raman scattering measurements have implied the formation of amorphous silicon nanoparticles in films annealed at 973 K and Si nanocrystals in films annealed at 1303 K. The latter conclusion is strongly supported by high resolution electron microscopy studies which show a high density of Si nanocrystals in these films. Photoluminescence has been observed from both amorphous and crystalline nanoparticles and interpreted in terms of band-to-band recombination in the nanoparticles having average size greater than 2.5 nm and carrier recombination through defect states in smaller nanoparticles. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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