Growth and characterization of metamorphic Inx(AlGa)1-xAs/InxGa1-xAs high electron mobility transistor material and devices with X=0.3-0.4.
| Autor: | Hoke, W. E., Lyman, P. S., Whelan, C. S., Mosca, J. J., Torabi, A., Chang, K. L., Hsieh, K. C. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2000, Vol. 18 Issue 3, p1638-1641, 4p |
| Databáze: | Complementary Index |
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