Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films.
| Autor: | Koester, T., Goldschmidtboeing, F., Hadam, B., Stein, J., Altmeyer, S., Spangenberg, B., Kurz, H., Neumann, R., Brunner, K., Abstreiter, G. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1998, Vol. 16 Issue 6, p3804-3807, 4p |
| Databáze: | Complementary Index |
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