Effects of O2 addition to SiCl4/SiF4 and the thickness of the capping layer on gate recess etching of GaAs-pseudomorphic high electron mobility transistors.
| Autor: | Murad, S. K., Cameron, N. I., Beaumont, S. P., Wilkinson, C. D. W. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1996, Vol. 14 Issue 6, p3668-3673, 6p |
| Databáze: | Complementary Index |
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