Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates.
| Autor: | Hughes, W. C., Rowland, W. H., Johnson, M. A. L., Fujita, Shizuo, Cook, J. W., Schetzina, J. F., Ren, J., Edmond, J. A. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1995, Vol. 13 Issue 4, p1571-1577, 7p |
| Databáze: | Complementary Index |
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