Metal-oxide-semiconductor characterization of silicon surfaces thermally oxidized after reactive ion etching and magnetically enhanced reactive ion etching.
| Autor: | Settlemyer, Kenneth T., Ruzyllo, Jerzy, Hwang, David K., Leary, Herbert J. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1993, Vol. 11 Issue 2, p249-252, 4p |
| Databáze: | Complementary Index |
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