Chemically modified GaAs Schottky barrier variation.

Autor: Schmidt, M. T., Ma, Q. Y., Podlesnik, D. V., Osgood, R. M., Yang, E. S.
Zdroj: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1989, Vol. 7 Issue 4, p980-985, 6p
Databáze: Complementary Index