Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors.
| Autor: | Griem, H. T., Hsieh, K. H., D'Haenens, I. J., Delaney, M. J., Henige, J. A., Wicks, G. W., Brown, A. S. |
|---|---|
| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1987, Vol. 5 Issue 3, p785-791, 7p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|