| Autor: |
Kostishko, B. M., Atazhanov, Sh. R., Mikov, S. N., Puzov, I. P., Kordetskiı, K. A. |
| Předmět: |
|
| Zdroj: |
Technical Physics Letters; Mar99, Vol. 25 Issue 3, p212, 3p |
| Abstrakt: |
The time dependence of the decay of the photoluminescence of porous silicon subjected to high temperature carbonization (1000-1200°C) and simultaneously doped with B, P, Ga, or A1 atoms is investigated. The boron-doped samples show an anomalously long decay time for the blue-green (2.4 eV) photoluminescence band. In addition, in this case oscillations with a period of 50 ms are observed in the photoluminescence decay curve. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
