| Autor: |
Tyschenko, I. E., Zhuravlev, K. S., Vandyshev, E. N., Misiuk, A., Yankov, R. A., Rebohle, L., Skorupa, W. |
| Předmět: |
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| Zdroj: |
Semiconductors; Feb2001, Vol. 35 Issue 2, p125, 7p |
| Abstrakt: |
The influence of hydrostatic pressure on photoluminescence of SiO[sub x]N[sub y] (x = 0.25 and y = 1) films grown on the Si substrates and implanted with Ge[sub +] ions, with pressure applied during annealing of the films, was studied for the first time. It is shown that hydrostatic compression leads to a tenfold increase in the photoluminescence intensity of the implanted SiO[sub x]N[sub y] films compared to that obtained as a result of postimplantation annealings at atmospheric pressure. The observed increase in the photoluminescence intensity is attributed to accelerated formation of radiative-recombination centers in the metastable-phase zones in the implanted silicon oxynitride. These centers are tentatively related to ≡Si-Si≡ centers and to complexes involving Ge atoms (of ≡Si-Ge≡ and ≡Ge-Ge≡ types). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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