Electron-beam-induced current and TEM studies of stacking faults formed by the oxidation of boron-implanted silicon.
| Autor: | Seidel, T. E., Haszko, S. E., Maher, D. M. |
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| Zdroj: | Journal of Applied Physics; Dec1977, Vol. 48 Issue 12, p5038-5042, 5p |
| Databáze: | Complementary Index |
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