Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers.

Autor:	Mahadik, Nadeemullah A., Stahlbush, Robert E., Ancona, M. G., Imhoff, Eugene A., Hobart, Karl D., Myers-Ward, Rachael L., Eddy, Charles R., Kurt Gaskill, D., Kub, Fritz J.
Předmět:	PHYSICS research ULTRAVIOLET radiation SEMICONDUCTOR doping LIGHT induced drift DRIFT mobility CARRIER density
Zdroj:	Applied Physics Letters; 1/23/2012, Vol. 100 Issue 4, p042102, 3p, 1 Color Photograph, 1 Black and White Photograph, 1 Graph
Abstrakt:	Stacking fault (SF) expansion from basal plane dislocations (BPDs) confined in highly doped 4H-SiC buffer layers is observed under high-power ultraviolet illumination (>1000 W/cm2). Once the SFs reach the active drift layers, grown above the buffer layers, they are seen to rapidly expand up to the sample surface where they can cause device degradation. BPD faulting in the buffer appears to have a carrier injection threshold. Carrier density simulations under various injection conditions and carrier lifetimes are used to establish the conditions of BPD faulting within the buffer layer that could prevent SF expansion into the drift layer. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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